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SIR692DP-T1-RE3

SIR692DP-T1-RE3

For Reference Only

Part Number SIR692DP-T1-RE3
PNEDA Part # SIR692DP-T1-RE3
Description MOSFET N-CH 250V 24.2A SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 99,090
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR692DP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR692DP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR692DP-T1-RE3, SIR692DP-T1-RE3 Datasheet (Total Pages: 7, Size: 206.14 KB)
PDFSIR692DP-T1-RE3 Datasheet Cover
SIR692DP-T1-RE3 Datasheet Page 2 SIR692DP-T1-RE3 Datasheet Page 3 SIR692DP-T1-RE3 Datasheet Page 4 SIR692DP-T1-RE3 Datasheet Page 5 SIR692DP-T1-RE3 Datasheet Page 6 SIR692DP-T1-RE3 Datasheet Page 7

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SIR692DP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C24.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs63mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 7.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1405pF @ 125V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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