Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIR812DP-T1-GE3

SIR812DP-T1-GE3

For Reference Only

Part Number SIR812DP-T1-GE3
PNEDA Part # SIR812DP-T1-GE3
Description MOSFET N-CH 30V 60A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 39,843
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR812DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR812DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR812DP-T1-GE3, SIR812DP-T1-GE3 Datasheet (Total Pages: 13, Size: 380.56 KB)
PDFSIR812DP-T1-GE3 Datasheet Cover
SIR812DP-T1-GE3 Datasheet Page 2 SIR812DP-T1-GE3 Datasheet Page 3 SIR812DP-T1-GE3 Datasheet Page 4 SIR812DP-T1-GE3 Datasheet Page 5 SIR812DP-T1-GE3 Datasheet Page 6 SIR812DP-T1-GE3 Datasheet Page 7 SIR812DP-T1-GE3 Datasheet Page 8 SIR812DP-T1-GE3 Datasheet Page 9 SIR812DP-T1-GE3 Datasheet Page 10 SIR812DP-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIR812DP-T1-GE3 Datasheet
  • where to find SIR812DP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIR812DP-T1-GE3
  • SIR812DP-T1-GE3 PDF Datasheet
  • SIR812DP-T1-GE3 Stock

  • SIR812DP-T1-GE3 Pinout
  • Datasheet SIR812DP-T1-GE3
  • SIR812DP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIR812DP-T1-GE3 Price
  • SIR812DP-T1-GE3 Distributor

SIR812DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs335nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10240pF @ 15V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

TSM150NB04LCR RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

966pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN

SI7623DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

5460pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

SSM3J56MFV,L3F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

800mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

390mOhm @ 800mA, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VESM

Package / Case

SOT-723

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

14.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

130mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1230pF @ 25V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HVSON (6x5)

Package / Case

8-VDFN Exposed Pad

IRLU8743PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4880pF @ 15V

FET Feature

-

Power Dissipation (Max)

135W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

SLF12575T-470M2R7-PF

SLF12575T-470M2R7-PF

TDK

FIXED IND 47UH 2.7A 52.8 MOHM

FA-20H 12.0000MD30Z-K3

FA-20H 12.0000MD30Z-K3

EPSON

CRYSTAL 12.00 MHZ 10.0PF SMD

ISL3152EIPZ

ISL3152EIPZ

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8DIP

WIZ810MJ

WIZ810MJ

WIZnet

CNTRLR ETHERNET 10/100 BASE-T/TX

FNM-30

FNM-30

Eaton - Bussmann Electrical Division

FUSE CARTRIDGE 30A 250VAC 5AG

AQY272A

AQY272A

Panasonic Electric Works

SSR RELAY SPST-NO 2A 0-60V

LTST-C193TBKT-5A

LTST-C193TBKT-5A

Lite-On Inc.

LED BLUE CLEAR CHIP SMD

IXGH10N300

IXGH10N300

IXYS

IGBT 3000V 18A 100W TO247AD

EVN-D8AA03B54

EVN-D8AA03B54

Panasonic Electronic Components

TRIMMER 50K OHM 0.1W PC PIN TOP

IRLML2402TRPBF

IRLML2402TRPBF

Infineon Technologies

MOSFET N-CH 20V 1.2A SOT-23

LTC1760IFW#PBF

LTC1760IFW#PBF

Linear Technology/Analog Devices

IC MANAGER BATTERY DUAL 48TSSOP

MAX97220AETE+

MAX97220AETE+

Maxim Integrated

IC AMP AUD.13W STER AB 16TQFN