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SIR840DP-T1-GE3

SIR840DP-T1-GE3

For Reference Only

Part Number SIR840DP-T1-GE3
PNEDA Part # SIR840DP-T1-GE3
Description MOSFET N-CH 30V PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR840DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR840DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SIR840DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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