SIRA60DP-T1-RE3
For Reference Only
| Part Number | SIRA60DP-T1-RE3 |
| PNEDA Part # | SIRA60DP-T1-RE3 |
| Description | MOSFET N-CH 30V 100A POWERPAKSO |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 7,740 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jul 23 - Jul 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SIRA60DP-T1-RE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SIRA60DP-T1-RE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SIRA60DP-T1-RE3 Datasheet
- where to find SIRA60DP-T1-RE3
- Vishay Siliconix
- Vishay Siliconix SIRA60DP-T1-RE3
- SIRA60DP-T1-RE3 PDF Datasheet
- SIRA60DP-T1-RE3 Stock
- SIRA60DP-T1-RE3 Pinout
- Datasheet SIRA60DP-T1-RE3
- SIRA60DP-T1-RE3 Supplier
- Vishay Siliconix Distributor
- SIRA60DP-T1-RE3 Price
- SIRA60DP-T1-RE3 Distributor
SIRA60DP-T1-RE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 0.94mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V |
| Vgs (Max) | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 7650pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
The Products You May Be Interested In
|
Manufacturer IXYS Series TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 140A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 70A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 174nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9700pF @ 25V FET Feature - Power Dissipation (Max) 577W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.05mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.2V @ 140µA Gate Charge (Qg) (Max) @ Vgs 239nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 17600pF @ 25V FET Feature - Power Dissipation (Max) 188W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-7-3 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V Rds On (Max) @ Id, Vgs 2Ohm @ 100mA, 4V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 500nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 31pF @ 25V FET Feature - Power Dissipation (Max) 480mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X1-DFN1212-3 Package / Case 3-UDFN |
Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 130mOhm @ 1A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 5V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 205pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.2V @ 196µA Gate Charge (Qg) (Max) @ Vgs 166nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28000pF @ 30V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
