Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIRA64DP-T1-GE3

SIRA64DP-T1-GE3

For Reference Only

Part Number SIRA64DP-T1-GE3
PNEDA Part # SIRA64DP-T1-GE3
Description MOSFET N-CH 30V 60A POWERPAKSO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 50,616
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIRA64DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIRA64DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIRA64DP-T1-GE3, SIRA64DP-T1-GE3 Datasheet (Total Pages: 9, Size: 246.67 KB)
PDFSIRA64DP-T1-RE3 Datasheet Cover
SIRA64DP-T1-RE3 Datasheet Page 2 SIRA64DP-T1-RE3 Datasheet Page 3 SIRA64DP-T1-RE3 Datasheet Page 4 SIRA64DP-T1-RE3 Datasheet Page 5 SIRA64DP-T1-RE3 Datasheet Page 6 SIRA64DP-T1-RE3 Datasheet Page 7 SIRA64DP-T1-RE3 Datasheet Page 8 SIRA64DP-T1-RE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIRA64DP-T1-GE3 Datasheet
  • where to find SIRA64DP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIRA64DP-T1-GE3
  • SIRA64DP-T1-GE3 PDF Datasheet
  • SIRA64DP-T1-GE3 Stock

  • SIRA64DP-T1-GE3 Pinout
  • Datasheet SIRA64DP-T1-GE3
  • SIRA64DP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIRA64DP-T1-GE3 Price
  • SIRA64DP-T1-GE3 Distributor

SIRA64DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3420pF @ 15V
FET Feature-
Power Dissipation (Max)27.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

SIS447DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

7.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

181nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

5590pF @ 10V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

SI2304-TP

Micro Commercial Co

Manufacturer

Micro Commercial Co

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

240pF @ 15V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

TSM1NB60SCT B0

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

500mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

138pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

FDMS8050

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.65mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

3V @ 750µA

Gate Charge (Qg) (Max) @ Vgs

285nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

22610pF @ 15V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

SIR880DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2440pF @ 40V

FET Feature

-

Power Dissipation (Max)

6.25W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

UPD720201K8-711-BAC-A

UPD720201K8-711-BAC-A

Renesas Electronics America

IC HOST CTRLR USB 3.0 68QFN

AS5145B-HSSM

AS5145B-HSSM

ams

ROTARY ENCODER MAGNETIC 1024PPR

MAX491ESD+T

MAX491ESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

GTL2002DC,125

GTL2002DC,125

NXP

IC TRNSLTR BIDIRECTIONAL 8VSSOP

LC4064V-75TN100C

LC4064V-75TN100C

Lattice Semiconductor Corporation

IC CPLD 64MC 7.5NS 100TQFP

LSXH4L

LSXH4L

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION DPDT 10A 120V

TCS3200D-TR

TCS3200D-TR

ams

IC COLOR SENSOR LIGHT-FREQ 8SOIC

SMCJ70CA-E3/57T

SMCJ70CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 70V 113V DO214AB

TJA1052IT/5Y

TJA1052IT/5Y

NXP

DGTL ISOLATOR 5KV 2CH CAN 16SO

TLP350H(F)

TLP350H(F)

Toshiba Semiconductor and Storage

X36 PB-F PHOTOCOUPLER THRU HOLE

SHT21

SHT21

Sensirion AG

SENSOR HUMID/TEMP 3V I2C 2% SMD

HX2019NLT

HX2019NLT

Pulse Electronics Network

XFRMR MAGNT MOD 1PORT POE 10/100