Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIRA72DP-T1-GE3

SIRA72DP-T1-GE3

For Reference Only

Part Number SIRA72DP-T1-GE3
PNEDA Part # SIRA72DP-T1-GE3
Description MOSFET N-CH 40V 60A POWERPAKSO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 26,166
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIRA72DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIRA72DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIRA72DP-T1-GE3, SIRA72DP-T1-GE3 Datasheet (Total Pages: 13, Size: 398.63 KB)
PDFSIRA72DP-T1-GE3 Datasheet Cover
SIRA72DP-T1-GE3 Datasheet Page 2 SIRA72DP-T1-GE3 Datasheet Page 3 SIRA72DP-T1-GE3 Datasheet Page 4 SIRA72DP-T1-GE3 Datasheet Page 5 SIRA72DP-T1-GE3 Datasheet Page 6 SIRA72DP-T1-GE3 Datasheet Page 7 SIRA72DP-T1-GE3 Datasheet Page 8 SIRA72DP-T1-GE3 Datasheet Page 9 SIRA72DP-T1-GE3 Datasheet Page 10 SIRA72DP-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIRA72DP-T1-GE3 Datasheet
  • where to find SIRA72DP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIRA72DP-T1-GE3
  • SIRA72DP-T1-GE3 PDF Datasheet
  • SIRA72DP-T1-GE3 Stock

  • SIRA72DP-T1-GE3 Pinout
  • Datasheet SIRA72DP-T1-GE3
  • SIRA72DP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIRA72DP-T1-GE3 Price
  • SIRA72DP-T1-GE3 Distributor

SIRA72DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3240pF @ 20V
FET Feature-
Power Dissipation (Max)56.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

BUK9Y12-55B,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

61.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

2880pF @ 25V

FET Feature

-

Power Dissipation (Max)

106W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

FCPF650N80Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 800µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1565pF @ 100V

FET Feature

-

Power Dissipation (Max)

30.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

IPB65R225C7ATMA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

225mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

996pF @ 400V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRL8113LPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

105A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2840pF @ 15V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPC50N04S5L5R5ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 13µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1209pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-33

Package / Case

8-PowerTDFN

Recently Sold

AOD413

AOD413

Alpha & Omega Semiconductor

MOSFET P-CH 40V 24A TO252

AT32UC3C1256C-AUT

AT32UC3C1256C-AUT

Microchip Technology

IC MCU 32BIT 256KB FLASH 100TQFP

NTJD4152PT1G

NTJD4152PT1G

ON Semiconductor

MOSFET 2P-CH 20V 0.88A SOT-363

LTC3400BES6#TRMPBF

LTC3400BES6#TRMPBF

Linear Technology/Analog Devices

IC REG BOOST ADJ 600MA TSOT23-6

74F00SC

74F00SC

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA

MIC49150WR

MIC49150WR

Microchip Technology

IC REG LIN POS ADJ 1.5A SPAK-5

3-1462039-1

3-1462039-1

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 12VDC

TLMY1000-GS08

TLMY1000-GS08

Vishay Semiconductor Opto Division

LED YELLOW 0603 SMD

MX25L6433FM2I-08G

MX25L6433FM2I-08G

Macronix

IC FLASH SERIAL NOR 64M 8SOP

SQJ459EP-T1_GE3

SQJ459EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 52A POWERPAKSO-8

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23