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SIS429DNT-T1-GE3

SIS429DNT-T1-GE3

For Reference Only

Part Number SIS429DNT-T1-GE3
PNEDA Part # SIS429DNT-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 30V 20A POWERPAK1212
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 8,802
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Sep 30 - Oct 5 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

SIS429DNT-T1-GE3 Resources

Brand Vishay Siliconix
Mfr. Part NumberSIS429DNT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS429DNT-T1-GE3, SIS429DNT-T1-GE3 Datasheet (Total Pages: 8, Size: 160.75 KB)
PDFSIS429DNT-T1-GE3 Datasheet Cover
SIS429DNT-T1-GE3 Datasheet Page 2 SIS429DNT-T1-GE3 Datasheet Page 3 SIS429DNT-T1-GE3 Datasheet Page 4 SIS429DNT-T1-GE3 Datasheet Page 5 SIS429DNT-T1-GE3 Datasheet Page 6 SIS429DNT-T1-GE3 Datasheet Page 7 SIS429DNT-T1-GE3 Datasheet Page 8

SIS429DNT-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs21mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 15V
FET Feature-
Power Dissipation (Max)27.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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