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SIS435DNT-T1-GE3

SIS435DNT-T1-GE3

For Reference Only

Part Number SIS435DNT-T1-GE3
PNEDA Part # SIS435DNT-T1-GE3
Description MOSFET P-CH 20V 30A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,648
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS435DNT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS435DNT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS435DNT-T1-GE3, SIS435DNT-T1-GE3 Datasheet (Total Pages: 8, Size: 179.42 KB)
PDFSIS435DNT-T1-GE3 Datasheet Cover
SIS435DNT-T1-GE3 Datasheet Page 2 SIS435DNT-T1-GE3 Datasheet Page 3 SIS435DNT-T1-GE3 Datasheet Page 4 SIS435DNT-T1-GE3 Datasheet Page 5 SIS435DNT-T1-GE3 Datasheet Page 6 SIS435DNT-T1-GE3 Datasheet Page 7 SIS435DNT-T1-GE3 Datasheet Page 8

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SIS435DNT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs5.4mOhm @ 13A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds5700pF @ 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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