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SIS436DN-T1-GE3

SIS436DN-T1-GE3

For Reference Only

Part Number SIS436DN-T1-GE3
PNEDA Part # SIS436DN-T1-GE3
Description MOSFET N-CH 25V 16A PPAK 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS436DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS436DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS436DN-T1-GE3, SIS436DN-T1-GE3 Datasheet (Total Pages: 13, Size: 573.95 KB)
PDFSIS436DN-T1-GE3 Datasheet Cover
SIS436DN-T1-GE3 Datasheet Page 2 SIS436DN-T1-GE3 Datasheet Page 3 SIS436DN-T1-GE3 Datasheet Page 4 SIS436DN-T1-GE3 Datasheet Page 5 SIS436DN-T1-GE3 Datasheet Page 6 SIS436DN-T1-GE3 Datasheet Page 7 SIS436DN-T1-GE3 Datasheet Page 8 SIS436DN-T1-GE3 Datasheet Page 9 SIS436DN-T1-GE3 Datasheet Page 10 SIS436DN-T1-GE3 Datasheet Page 11

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SIS436DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds855pF @ 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 27.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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