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SIS488DN-T1-GE3

SIS488DN-T1-GE3

For Reference Only

Part Number SIS488DN-T1-GE3
PNEDA Part # SIS488DN-T1-GE3
Description MOSFET N-CH 40V 40A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 24 - May 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS488DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS488DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS488DN-T1-GE3, SIS488DN-T1-GE3 Datasheet (Total Pages: 13, Size: 558.54 KB)
PDFSIS488DN-T1-GE3 Datasheet Cover
SIS488DN-T1-GE3 Datasheet Page 2 SIS488DN-T1-GE3 Datasheet Page 3 SIS488DN-T1-GE3 Datasheet Page 4 SIS488DN-T1-GE3 Datasheet Page 5 SIS488DN-T1-GE3 Datasheet Page 6 SIS488DN-T1-GE3 Datasheet Page 7 SIS488DN-T1-GE3 Datasheet Page 8 SIS488DN-T1-GE3 Datasheet Page 9 SIS488DN-T1-GE3 Datasheet Page 10 SIS488DN-T1-GE3 Datasheet Page 11

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SIS488DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1330pF @ 20V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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