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SIS862DN-T1-GE3

SIS862DN-T1-GE3

For Reference Only

Part Number SIS862DN-T1-GE3
PNEDA Part # SIS862DN-T1-GE3
Description MOSFET N-CH 60V 40A 1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 52,176
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS862DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS862DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS862DN-T1-GE3, SIS862DN-T1-GE3 Datasheet (Total Pages: 13, Size: 560.85 KB)
PDFSIS862DN-T1-GE3 Datasheet Cover
SIS862DN-T1-GE3 Datasheet Page 2 SIS862DN-T1-GE3 Datasheet Page 3 SIS862DN-T1-GE3 Datasheet Page 4 SIS862DN-T1-GE3 Datasheet Page 5 SIS862DN-T1-GE3 Datasheet Page 6 SIS862DN-T1-GE3 Datasheet Page 7 SIS862DN-T1-GE3 Datasheet Page 8 SIS862DN-T1-GE3 Datasheet Page 9 SIS862DN-T1-GE3 Datasheet Page 10 SIS862DN-T1-GE3 Datasheet Page 11

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SIS862DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1320pF @ 30V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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