SIS903DN-T1-GE3
For Reference Only
| Part Number | SIS903DN-T1-GE3 |
| PNEDA Part # | SIS903DN-T1-GE3 |
| Description | MOSFET DUAL P-CHAN POWERPAK 1212 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 7,920 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIS903DN-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SIS903DN-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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SIS903DN-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen III |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 20.1mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2565pF @ 10V |
| Power - Max | 2.6W (Ta), 23W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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