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SISF00DN-T1-GE3

SISF00DN-T1-GE3

For Reference Only

Part Number SISF00DN-T1-GE3
PNEDA Part # SISF00DN-T1-GE3
Description MOSFET DUAL N-CH 30V POWERPAK 12
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISF00DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISF00DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SISF00DN-T1-GE3, SISF00DN-T1-GE3 Datasheet (Total Pages: 9, Size: 277.68 KB)
PDFSISF00DN-T1-GE3 Datasheet Cover
SISF00DN-T1-GE3 Datasheet Page 2 SISF00DN-T1-GE3 Datasheet Page 3 SISF00DN-T1-GE3 Datasheet Page 4 SISF00DN-T1-GE3 Datasheet Page 5 SISF00DN-T1-GE3 Datasheet Page 6 SISF00DN-T1-GE3 Datasheet Page 7 SISF00DN-T1-GE3 Datasheet Page 8 SISF00DN-T1-GE3 Datasheet Page 9

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SISF00DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET Type2 N-Channel (Dual) Common Drain
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 15V
Power - Max69.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8SCD
Supplier Device PackagePowerPAK® 1212-8SCD

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