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SISH114ADN-T1-GE3

SISH114ADN-T1-GE3

For Reference Only

Part Number SISH114ADN-T1-GE3
PNEDA Part # SISH114ADN-T1-GE3
Description MOSFET N-CH 30V POWERPAK 1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 56,154
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISH114ADN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISH114ADN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISH114ADN-T1-GE3, SISH114ADN-T1-GE3 Datasheet (Total Pages: 9, Size: 192.91 KB)
PDFSISH114ADN-T1-GE3 Datasheet Cover
SISH114ADN-T1-GE3 Datasheet Page 2 SISH114ADN-T1-GE3 Datasheet Page 3 SISH114ADN-T1-GE3 Datasheet Page 4 SISH114ADN-T1-GE3 Datasheet Page 5 SISH114ADN-T1-GE3 Datasheet Page 6 SISH114ADN-T1-GE3 Datasheet Page 7 SISH114ADN-T1-GE3 Datasheet Page 8 SISH114ADN-T1-GE3 Datasheet Page 9

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SISH114ADN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1230pF @ 15V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH

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