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SISH434DN-T1-GE3

SISH434DN-T1-GE3

For Reference Only

Part Number SISH434DN-T1-GE3
PNEDA Part # SISH434DN-T1-GE3
Description MOSFET N-CHAN 40V PPAK 1212-8SH
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,066
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISH434DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISH434DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISH434DN-T1-GE3, SISH434DN-T1-GE3 Datasheet (Total Pages: 9, Size: 190.78 KB)
PDFSISH434DN-T1-GE3 Datasheet Cover
SISH434DN-T1-GE3 Datasheet Page 2 SISH434DN-T1-GE3 Datasheet Page 3 SISH434DN-T1-GE3 Datasheet Page 4 SISH434DN-T1-GE3 Datasheet Page 5 SISH434DN-T1-GE3 Datasheet Page 6 SISH434DN-T1-GE3 Datasheet Page 7 SISH434DN-T1-GE3 Datasheet Page 8 SISH434DN-T1-GE3 Datasheet Page 9

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SISH434DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C17.6A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.6mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1530pF @ 20V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH

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