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SISS08DN-T1-GE3

SISS08DN-T1-GE3

For Reference Only

Part Number SISS08DN-T1-GE3
PNEDA Part # SISS08DN-T1-GE3
Description MOSFET N-CHAN 25 V POWERPAK 1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS08DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS08DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS08DN-T1-GE3, SISS08DN-T1-GE3 Datasheet (Total Pages: 9, Size: 249.54 KB)
PDFSISS08DN-T1-GE3 Datasheet Cover
SISS08DN-T1-GE3 Datasheet Page 2 SISS08DN-T1-GE3 Datasheet Page 3 SISS08DN-T1-GE3 Datasheet Page 4 SISS08DN-T1-GE3 Datasheet Page 5 SISS08DN-T1-GE3 Datasheet Page 6 SISS08DN-T1-GE3 Datasheet Page 7 SISS08DN-T1-GE3 Datasheet Page 8 SISS08DN-T1-GE3 Datasheet Page 9

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SISS08DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C53.9A (Ta), 195.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.23mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3670pF @ 12.5V
FET Feature-
Power Dissipation (Max)5W (Ta), 65.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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