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SISS10DN-T1-GE3

SISS10DN-T1-GE3

For Reference Only

Part Number SISS10DN-T1-GE3
PNEDA Part # SISS10DN-T1-GE3
Description MOSFET N-CH 40V 60A PPAK 1212-8S
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 47,232
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS10DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS10DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS10DN-T1-GE3, SISS10DN-T1-GE3 Datasheet (Total Pages: 9, Size: 325.31 KB)
PDFSISS10DN-T1-GE3 Datasheet Cover
SISS10DN-T1-GE3 Datasheet Page 2 SISS10DN-T1-GE3 Datasheet Page 3 SISS10DN-T1-GE3 Datasheet Page 4 SISS10DN-T1-GE3 Datasheet Page 5 SISS10DN-T1-GE3 Datasheet Page 6 SISS10DN-T1-GE3 Datasheet Page 7 SISS10DN-T1-GE3 Datasheet Page 8 SISS10DN-T1-GE3 Datasheet Page 9

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SISS10DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3750pF @ 20V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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