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SISS23DN-T1-GE3

SISS23DN-T1-GE3

For Reference Only

Part Number SISS23DN-T1-GE3
PNEDA Part # SISS23DN-T1-GE3
Description MOSFET P-CH 20V 50A PPAK 1212-8S
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS23DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS23DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS23DN-T1-GE3, SISS23DN-T1-GE3 Datasheet (Total Pages: 9, Size: 266.35 KB)
PDFSISS23DN-T1-GE3 Datasheet Cover
SISS23DN-T1-GE3 Datasheet Page 2 SISS23DN-T1-GE3 Datasheet Page 3 SISS23DN-T1-GE3 Datasheet Page 4 SISS23DN-T1-GE3 Datasheet Page 5 SISS23DN-T1-GE3 Datasheet Page 6 SISS23DN-T1-GE3 Datasheet Page 7 SISS23DN-T1-GE3 Datasheet Page 8 SISS23DN-T1-GE3 Datasheet Page 9

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SISS23DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds8840pF @ 15V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 57W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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