Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SISS23DN-T1-GE3

SISS23DN-T1-GE3

For Reference Only

Part Number SISS23DN-T1-GE3
PNEDA Part # SISS23DN-T1-GE3
Description MOSFET P-CH 20V 50A PPAK 1212-8S
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS23DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS23DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS23DN-T1-GE3, SISS23DN-T1-GE3 Datasheet (Total Pages: 9, Size: 266.35 KB)
PDFSISS23DN-T1-GE3 Datasheet Cover
SISS23DN-T1-GE3 Datasheet Page 2 SISS23DN-T1-GE3 Datasheet Page 3 SISS23DN-T1-GE3 Datasheet Page 4 SISS23DN-T1-GE3 Datasheet Page 5 SISS23DN-T1-GE3 Datasheet Page 6 SISS23DN-T1-GE3 Datasheet Page 7 SISS23DN-T1-GE3 Datasheet Page 8 SISS23DN-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SISS23DN-T1-GE3 Datasheet
  • where to find SISS23DN-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SISS23DN-T1-GE3
  • SISS23DN-T1-GE3 PDF Datasheet
  • SISS23DN-T1-GE3 Stock

  • SISS23DN-T1-GE3 Pinout
  • Datasheet SISS23DN-T1-GE3
  • SISS23DN-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SISS23DN-T1-GE3 Price
  • SISS23DN-T1-GE3 Distributor

SISS23DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds8840pF @ 15V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 57W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

The Products You May Be Interested In

DMN63D1L-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

380mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

0.3nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 25V

FET Feature

-

Power Dissipation (Max)

370mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

SIE854DF-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14.2mOhm @ 13.2A, 10V

Vgs(th) (Max) @ Id

4.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 50V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PolarPAK® (L)

Package / Case

10-PolarPAK® (L)

STFW2N105K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1050V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 750mA, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

30V

Input Capacitance (Ciss) (Max) @ Vds

115pF @ 100V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOWATT-218FX

Package / Case

ISOWATT218FX

2N7002KT7G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

380mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.7nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

45pF @ 20V

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SI4493DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

7.75mOhm @ 14A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

ADM6820ARJZ-REEL7

ADM6820ARJZ-REEL7

Analog Devices

IC POWER SEQUENCER SOT23-6

KA7810AETU

KA7810AETU

ON Semiconductor

IC REG LINEAR 10V 1A TO220-3

NC7WZ132K8X

NC7WZ132K8X

ON Semiconductor

IC GATE NAND SCHMITT 2CH US8

DFLS1200-7

DFLS1200-7

Diodes Incorporated

DIODE SCHOTTKY 200V POWERDI123

4608X-101-332LF

4608X-101-332LF

Bourns

RES ARRAY 7 RES 3.3K OHM 8SIP

NTS0104BQ,115

NTS0104BQ,115

NXP

IC TRNSLTR BIDIR 14DHVQFN

DS9503P+

DS9503P+

Maxim Integrated

TVS DIODE 7.5V 6TSOC

DAN217UMTL

DAN217UMTL

Rohm Semiconductor

DIODE ARRAY GP 80V 100MA UMD3F

LT8331IMSE#TRPBF

LT8331IMSE#TRPBF

Linear Technology/Analog Devices

IC REG MULTI CONFG ADJ 16MSOP

NB2305AI1HDR2G

NB2305AI1HDR2G

ON Semiconductor

IC BUFFER CLOCK 5OUT 3.3V 8-SOIC

HDSP-0770

HDSP-0770

Broadcom

DISPLAY 4X7 NUM RDP BCD HER

MAX3491EESD+T

MAX3491EESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC