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SISS27ADN-T1-GE3

SISS27ADN-T1-GE3

For Reference Only

Part Number SISS27ADN-T1-GE3
PNEDA Part # SISS27ADN-T1-GE3
Description MOSFET P-CH 30V 50A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS27ADN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS27ADN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS27ADN-T1-GE3, SISS27ADN-T1-GE3 Datasheet (Total Pages: 7, Size: 237.03 KB)
PDFSISS27ADN-T1-GE3 Datasheet Cover
SISS27ADN-T1-GE3 Datasheet Page 2 SISS27ADN-T1-GE3 Datasheet Page 3 SISS27ADN-T1-GE3 Datasheet Page 4 SISS27ADN-T1-GE3 Datasheet Page 5 SISS27ADN-T1-GE3 Datasheet Page 6 SISS27ADN-T1-GE3 Datasheet Page 7

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SISS27ADN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen III
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4660pF @ 15V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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