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SISS40DN-T1-GE3

SISS40DN-T1-GE3

For Reference Only

Part Number SISS40DN-T1-GE3
PNEDA Part # SISS40DN-T1-GE3
Description MOSFET N-CH 100V 36.5A PPAK 1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 29,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS40DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS40DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS40DN-T1-GE3, SISS40DN-T1-GE3 Datasheet (Total Pages: 9, Size: 214.62 KB)
PDFSISS40DN-T1-GE3 Datasheet Cover
SISS40DN-T1-GE3 Datasheet Page 2 SISS40DN-T1-GE3 Datasheet Page 3 SISS40DN-T1-GE3 Datasheet Page 4 SISS40DN-T1-GE3 Datasheet Page 5 SISS40DN-T1-GE3 Datasheet Page 6 SISS40DN-T1-GE3 Datasheet Page 7 SISS40DN-T1-GE3 Datasheet Page 8 SISS40DN-T1-GE3 Datasheet Page 9

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SISS40DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C36.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds845pF @ 50V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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