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SISS65DN-T1-GE3

SISS65DN-T1-GE3

For Reference Only

Part Number SISS65DN-T1-GE3
PNEDA Part # SISS65DN-T1-GE3
Description MOSFET P-CHAN 30V PPAK 1212-8S
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,484
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 25 - May 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS65DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS65DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS65DN-T1-GE3, SISS65DN-T1-GE3 Datasheet (Total Pages: 9, Size: 249.01 KB)
PDFSISS65DN-T1-GE3 Datasheet Cover
SISS65DN-T1-GE3 Datasheet Page 2 SISS65DN-T1-GE3 Datasheet Page 3 SISS65DN-T1-GE3 Datasheet Page 4 SISS65DN-T1-GE3 Datasheet Page 5 SISS65DN-T1-GE3 Datasheet Page 6 SISS65DN-T1-GE3 Datasheet Page 7 SISS65DN-T1-GE3 Datasheet Page 8 SISS65DN-T1-GE3 Datasheet Page 9

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SISS65DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen III
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25.9A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs138nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4930pF @ 15V
FET Feature-
Power Dissipation (Max)5.1W (Ta), 65.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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