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SISS66DN-T1-GE3

SISS66DN-T1-GE3

For Reference Only

Part Number SISS66DN-T1-GE3
PNEDA Part # SISS66DN-T1-GE3
Description MOSFET N-CH 30V W/SCHOTTKY PP 12
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,392
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS66DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS66DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS66DN-T1-GE3, SISS66DN-T1-GE3 Datasheet (Total Pages: 9, Size: 253.59 KB)
PDFSISS66DN-T1-GE3 Datasheet Cover
SISS66DN-T1-GE3 Datasheet Page 2 SISS66DN-T1-GE3 Datasheet Page 3 SISS66DN-T1-GE3 Datasheet Page 4 SISS66DN-T1-GE3 Datasheet Page 5 SISS66DN-T1-GE3 Datasheet Page 6 SISS66DN-T1-GE3 Datasheet Page 7 SISS66DN-T1-GE3 Datasheet Page 8 SISS66DN-T1-GE3 Datasheet Page 9

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SISS66DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C49.1A (Ta), 178.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.38mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs85.5nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3327pF @ 15V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)5.1W (Ta), 65.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S
Package / CasePowerPAK® 1212-8S

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