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SISS98DN-T1-GE3

SISS98DN-T1-GE3

For Reference Only

Part Number SISS98DN-T1-GE3
PNEDA Part # SISS98DN-T1-GE3
Description MOSFET N-CH 200V 14.1A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 22,956
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS98DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS98DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS98DN-T1-GE3, SISS98DN-T1-GE3 Datasheet (Total Pages: 9, Size: 341.09 KB)
PDFSISS98DN-T1-GE3 Datasheet Cover
SISS98DN-T1-GE3 Datasheet Page 2 SISS98DN-T1-GE3 Datasheet Page 3 SISS98DN-T1-GE3 Datasheet Page 4 SISS98DN-T1-GE3 Datasheet Page 5 SISS98DN-T1-GE3 Datasheet Page 6 SISS98DN-T1-GE3 Datasheet Page 7 SISS98DN-T1-GE3 Datasheet Page 8 SISS98DN-T1-GE3 Datasheet Page 9

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SISS98DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs105mOhm @ 7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 7.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds608pF @ 100V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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