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SIZ322DT-T1-GE3

SIZ322DT-T1-GE3

For Reference Only

Part Number SIZ322DT-T1-GE3
PNEDA Part # SIZ322DT-T1-GE3
Description MOSFET 2 N-CH 25V 30A 8-POWER33
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ322DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ322DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ322DT-T1-GE3, SIZ322DT-T1-GE3 Datasheet (Total Pages: 10, Size: 334.54 KB)
PDFSIZ322DT-T1-GE3 Datasheet Cover
SIZ322DT-T1-GE3 Datasheet Page 2 SIZ322DT-T1-GE3 Datasheet Page 3 SIZ322DT-T1-GE3 Datasheet Page 4 SIZ322DT-T1-GE3 Datasheet Page 5 SIZ322DT-T1-GE3 Datasheet Page 6 SIZ322DT-T1-GE3 Datasheet Page 7 SIZ322DT-T1-GE3 Datasheet Page 8 SIZ322DT-T1-GE3 Datasheet Page 9 SIZ322DT-T1-GE3 Datasheet Page 10

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SIZ322DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs6.35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 12.5V
Power - Max16.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-Power33 (3x3)

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