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SIZ346DT-T1-GE3

SIZ346DT-T1-GE3

For Reference Only

Part Number SIZ346DT-T1-GE3
PNEDA Part # SIZ346DT-T1-GE3
Description MOSFET 2N-CH 30V 17/30A 8POWER33
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 22,590
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ346DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ346DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ346DT-T1-GE3, SIZ346DT-T1-GE3 Datasheet (Total Pages: 14, Size: 380.34 KB)
PDFSIZ346DT-T1-GE3 Datasheet Cover
SIZ346DT-T1-GE3 Datasheet Page 2 SIZ346DT-T1-GE3 Datasheet Page 3 SIZ346DT-T1-GE3 Datasheet Page 4 SIZ346DT-T1-GE3 Datasheet Page 5 SIZ346DT-T1-GE3 Datasheet Page 6 SIZ346DT-T1-GE3 Datasheet Page 7 SIZ346DT-T1-GE3 Datasheet Page 8 SIZ346DT-T1-GE3 Datasheet Page 9 SIZ346DT-T1-GE3 Datasheet Page 10 SIZ346DT-T1-GE3 Datasheet Page 11

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SIZ346DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesPowerPAIR®, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17A (Tc), 30A (Tc)
Rds On (Max) @ Id, Vgs28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V, 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds325pF @ 15V, 650pF @ 15V
Power - Max16W, 16.7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-Power33 (3x3)

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