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SIZ350DT-T1-GE3

SIZ350DT-T1-GE3

For Reference Only

Part Number SIZ350DT-T1-GE3
PNEDA Part # SIZ350DT-T1-GE3
Description MOSFET DUAL N-CHAN 30V POWERPAIR
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,550
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ350DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ350DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ350DT-T1-GE3, SIZ350DT-T1-GE3 Datasheet (Total Pages: 10, Size: 316.49 KB)
PDFSIZ350DT-T1-GE3 Datasheet Cover
SIZ350DT-T1-GE3 Datasheet Page 2 SIZ350DT-T1-GE3 Datasheet Page 3 SIZ350DT-T1-GE3 Datasheet Page 4 SIZ350DT-T1-GE3 Datasheet Page 5 SIZ350DT-T1-GE3 Datasheet Page 6 SIZ350DT-T1-GE3 Datasheet Page 7 SIZ350DT-T1-GE3 Datasheet Page 8 SIZ350DT-T1-GE3 Datasheet Page 9 SIZ350DT-T1-GE3 Datasheet Page 10

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SIZ350DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs6.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds940pF @ 15V
Power - Max3.7W (Ta), 16.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-Power33 (3x3)

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