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SIZ730DT-T1-GE3

SIZ730DT-T1-GE3

For Reference Only

Part Number SIZ730DT-T1-GE3
PNEDA Part # SIZ730DT-T1-GE3
Description MOSFET 2N-CH 30V 16A 6-POWERPAIR
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,568
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ730DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ730DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ730DT-T1-GE3, SIZ730DT-T1-GE3 Datasheet (Total Pages: 14, Size: 210.84 KB)
PDFSIZ730DT-T1-GE3 Datasheet Cover
SIZ730DT-T1-GE3 Datasheet Page 2 SIZ730DT-T1-GE3 Datasheet Page 3 SIZ730DT-T1-GE3 Datasheet Page 4 SIZ730DT-T1-GE3 Datasheet Page 5 SIZ730DT-T1-GE3 Datasheet Page 6 SIZ730DT-T1-GE3 Datasheet Page 7 SIZ730DT-T1-GE3 Datasheet Page 8 SIZ730DT-T1-GE3 Datasheet Page 9 SIZ730DT-T1-GE3 Datasheet Page 10 SIZ730DT-T1-GE3 Datasheet Page 11

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SIZ730DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C16A, 35A
Rds On (Max) @ Id, Vgs9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds830pF @ 15V
Power - Max27W, 48W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-PowerPair™
Supplier Device Package6-PowerPair™

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