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SIZ900DT-T1-GE3

SIZ900DT-T1-GE3

For Reference Only

Part Number SIZ900DT-T1-GE3
PNEDA Part # SIZ900DT-T1-GE3
Description MOSFET 2N-CH 30V 24A POWERPAIR
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,668
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ900DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ900DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ900DT-T1-GE3, SIZ900DT-T1-GE3 Datasheet (Total Pages: 14, Size: 204.19 KB)
PDFSIZ900DT-T1-GE3 Datasheet Cover
SIZ900DT-T1-GE3 Datasheet Page 2 SIZ900DT-T1-GE3 Datasheet Page 3 SIZ900DT-T1-GE3 Datasheet Page 4 SIZ900DT-T1-GE3 Datasheet Page 5 SIZ900DT-T1-GE3 Datasheet Page 6 SIZ900DT-T1-GE3 Datasheet Page 7 SIZ900DT-T1-GE3 Datasheet Page 8 SIZ900DT-T1-GE3 Datasheet Page 9 SIZ900DT-T1-GE3 Datasheet Page 10 SIZ900DT-T1-GE3 Datasheet Page 11

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SIZ900DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C24A, 28A
Rds On (Max) @ Id, Vgs7.2mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1830pF @ 15V
Power - Max48W, 100W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-PowerPair™
Supplier Device Package6-PowerPair™

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