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SIZ904DT-T1-GE3

SIZ904DT-T1-GE3

For Reference Only

Part Number SIZ904DT-T1-GE3
PNEDA Part # SIZ904DT-T1-GE3
Description MOSFET 2N-CH 30V 12A POWERPAIR
Manufacturer Vishay Siliconix
Unit Price
1 ---------- $6.9087
100 ---------- $6.5848
250 ---------- $6.2610
500 ---------- $5.9371
750 ---------- $5.6673
1,000 ---------- $5.3974
In Stock 258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ904DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ904DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ904DT-T1-GE3, SIZ904DT-T1-GE3 Datasheet (Total Pages: 14, Size: 231.11 KB)
PDFSIZ904DT-T1-GE3 Datasheet Cover
SIZ904DT-T1-GE3 Datasheet Page 2 SIZ904DT-T1-GE3 Datasheet Page 3 SIZ904DT-T1-GE3 Datasheet Page 4 SIZ904DT-T1-GE3 Datasheet Page 5 SIZ904DT-T1-GE3 Datasheet Page 6 SIZ904DT-T1-GE3 Datasheet Page 7 SIZ904DT-T1-GE3 Datasheet Page 8 SIZ904DT-T1-GE3 Datasheet Page 9 SIZ904DT-T1-GE3 Datasheet Page 10 SIZ904DT-T1-GE3 Datasheet Page 11

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SIZ904DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A, 16A
Rds On (Max) @ Id, Vgs24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds435pF @ 15V
Power - Max20W, 33W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-PowerPair™
Supplier Device Package6-PowerPair™

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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Alpha & Omega Semiconductor

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Series

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Drain to Source Voltage (Vdss)

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Rds On (Max) @ Id, Vgs

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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