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SIZ910DT-T1-GE3

SIZ910DT-T1-GE3

For Reference Only

Part Number SIZ910DT-T1-GE3
PNEDA Part # SIZ910DT-T1-GE3
Description MOSFET 2N-CH 30V 40A POWERPAIR
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ910DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ910DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ910DT-T1-GE3, SIZ910DT-T1-GE3 Datasheet (Total Pages: 14, Size: 210.69 KB)
PDFSIZ910DT-T1-GE3 Datasheet Cover
SIZ910DT-T1-GE3 Datasheet Page 2 SIZ910DT-T1-GE3 Datasheet Page 3 SIZ910DT-T1-GE3 Datasheet Page 4 SIZ910DT-T1-GE3 Datasheet Page 5 SIZ910DT-T1-GE3 Datasheet Page 6 SIZ910DT-T1-GE3 Datasheet Page 7 SIZ910DT-T1-GE3 Datasheet Page 8 SIZ910DT-T1-GE3 Datasheet Page 9 SIZ910DT-T1-GE3 Datasheet Page 10 SIZ910DT-T1-GE3 Datasheet Page 11

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SIZ910DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C40A
Rds On (Max) @ Id, Vgs5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 15V
Power - Max48W, 100W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

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