Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIZ910DT-T1-GE3

SIZ910DT-T1-GE3

For Reference Only

Part Number SIZ910DT-T1-GE3
PNEDA Part # SIZ910DT-T1-GE3
Description MOSFET 2N-CH 30V 40A POWERPAIR
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ910DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ910DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ910DT-T1-GE3, SIZ910DT-T1-GE3 Datasheet (Total Pages: 14, Size: 210.69 KB)
PDFSIZ910DT-T1-GE3 Datasheet Cover
SIZ910DT-T1-GE3 Datasheet Page 2 SIZ910DT-T1-GE3 Datasheet Page 3 SIZ910DT-T1-GE3 Datasheet Page 4 SIZ910DT-T1-GE3 Datasheet Page 5 SIZ910DT-T1-GE3 Datasheet Page 6 SIZ910DT-T1-GE3 Datasheet Page 7 SIZ910DT-T1-GE3 Datasheet Page 8 SIZ910DT-T1-GE3 Datasheet Page 9 SIZ910DT-T1-GE3 Datasheet Page 10 SIZ910DT-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIZ910DT-T1-GE3 Datasheet
  • where to find SIZ910DT-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIZ910DT-T1-GE3
  • SIZ910DT-T1-GE3 PDF Datasheet
  • SIZ910DT-T1-GE3 Stock

  • SIZ910DT-T1-GE3 Pinout
  • Datasheet SIZ910DT-T1-GE3
  • SIZ910DT-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIZ910DT-T1-GE3 Price
  • SIZ910DT-T1-GE3 Distributor

SIZ910DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C40A
Rds On (Max) @ Id, Vgs5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 15V
Power - Max48W, 100W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

The Products You May Be Interested In

IRF7102

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

2A

Rds On (Max) @ Id, Vgs

300mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

Power - Max

2W

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

FDMD85100

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.4A

Rds On (Max) @ Id, Vgs

9.9mOhm @ 10.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2230pF @ 50V

Power - Max

2.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-Power 5x6

UPA2380T1P-SSA-A

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate, 2.5V Drive

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Rds On (Max) @ Id, Vgs

32.5mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 4V

Input Capacitance (Ciss) (Max) @ Vds

615pF @ 10V

Power - Max

1.15W (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Package / Case

4-XFLGA

Supplier Device Package

4-EFLIP-LGA (1.11x1.11)

2N7002VA-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

280mA

Rds On (Max) @ Id, Vgs

7.5Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Power - Max

150mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

SQJ912AEP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

30A

Rds On (Max) @ Id, Vgs

9.3mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1835pF @ 20V

Power - Max

48W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

Recently Sold

IRFU9024NPBF

IRFU9024NPBF

Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

CNY17F-2

CNY17F-2

Everlight Electronics Co Ltd

OPTOISOLTR 5KV TRANSISTOR 6-DIP

7443551131

7443551131

Wurth Electronics

FIXED IND 13UH 10A 11.2 MOHM SMD

2SA1943-O(Q)

2SA1943-O(Q)

Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PL

ES1B-E3/61T

ES1B-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

DS18S20Z+T&R

DS18S20Z+T&R

Maxim Integrated

SENSOR DIGITAL -55C-125C 8SOIC

LT8610ABHMSE#TRPBF

LT8610ABHMSE#TRPBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 3.5A 16MSOP

CMS16(TE12L,Q,M)

CMS16(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 3A MFLAT

MTFC8GLWDQ-3M AIT Z TR

MTFC8GLWDQ-3M AIT Z TR

Micron Technology Inc.

IC FLASH 64G MMC 100LBGA

WM8962ECSN/R

WM8962ECSN/R

Cirrus Logic Inc.

IC CODEC STER 49WCSP

DS3232SN#

DS3232SN#

Maxim Integrated

IC RTC CLK/CALENDAR I2C 20-SOIC

SD103AW-E3-08

SD103AW-E3-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V SOD123