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SIZ926DT-T1-GE3

SIZ926DT-T1-GE3

For Reference Only

Part Number SIZ926DT-T1-GE3
PNEDA Part # SIZ926DT-T1-GE3
Description MOSFET 2 N-CH 25V 8-POWERPAIR
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ926DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ926DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ926DT-T1-GE3, SIZ926DT-T1-GE3 Datasheet (Total Pages: 14, Size: 247.02 KB)
PDFSIZ926DT-T1-GE3 Datasheet Cover
SIZ926DT-T1-GE3 Datasheet Page 2 SIZ926DT-T1-GE3 Datasheet Page 3 SIZ926DT-T1-GE3 Datasheet Page 4 SIZ926DT-T1-GE3 Datasheet Page 5 SIZ926DT-T1-GE3 Datasheet Page 6 SIZ926DT-T1-GE3 Datasheet Page 7 SIZ926DT-T1-GE3 Datasheet Page 8 SIZ926DT-T1-GE3 Datasheet Page 9 SIZ926DT-T1-GE3 Datasheet Page 10 SIZ926DT-T1-GE3 Datasheet Page 11

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SIZ926DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V, 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds925pF @ 10V, 2150pF @ 10V
Power - Max20.2W, 40W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

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