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SIZ980DT-T1-GE3

SIZ980DT-T1-GE3

For Reference Only

Part Number SIZ980DT-T1-GE3
PNEDA Part # SIZ980DT-T1-GE3
Description MOSFET 2 N-CH 30V 8-POWERPAIR
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ980DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ980DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ980DT-T1-GE3, SIZ980DT-T1-GE3 Datasheet (Total Pages: 14, Size: 232.48 KB)
PDFSIZ980DT-T1-GE3 Datasheet Cover
SIZ980DT-T1-GE3 Datasheet Page 2 SIZ980DT-T1-GE3 Datasheet Page 3 SIZ980DT-T1-GE3 Datasheet Page 4 SIZ980DT-T1-GE3 Datasheet Page 5 SIZ980DT-T1-GE3 Datasheet Page 6 SIZ980DT-T1-GE3 Datasheet Page 7 SIZ980DT-T1-GE3 Datasheet Page 8 SIZ980DT-T1-GE3 Datasheet Page 9 SIZ980DT-T1-GE3 Datasheet Page 10 SIZ980DT-T1-GE3 Datasheet Page 11

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SIZ980DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual), Schottky
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.1nC @ 4.5V, 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds930pF @ 15V, 4600pF @ 15V
Power - Max20W, 66W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair®

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