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SIZ988DT-T1-GE3

SIZ988DT-T1-GE3

For Reference Only

Part Number SIZ988DT-T1-GE3
PNEDA Part # SIZ988DT-T1-GE3
Description MOSFET 2 N-CH 30V 8-POWERPAIR
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 21,612
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ988DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ988DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ988DT-T1-GE3, SIZ988DT-T1-GE3 Datasheet (Total Pages: 14, Size: 230.46 KB)
PDFSIZ988DT-T1-GE3 Datasheet Cover
SIZ988DT-T1-GE3 Datasheet Page 2 SIZ988DT-T1-GE3 Datasheet Page 3 SIZ988DT-T1-GE3 Datasheet Page 4 SIZ988DT-T1-GE3 Datasheet Page 5 SIZ988DT-T1-GE3 Datasheet Page 6 SIZ988DT-T1-GE3 Datasheet Page 7 SIZ988DT-T1-GE3 Datasheet Page 8 SIZ988DT-T1-GE3 Datasheet Page 9 SIZ988DT-T1-GE3 Datasheet Page 10 SIZ988DT-T1-GE3 Datasheet Page 11

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SIZ988DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 4.5V, 23.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V, 2425pF @ 15V
Power - Max20.2W, 40W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair®

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