SIZF916DT-T1-GE3
For Reference Only
| Part Number | SIZF916DT-T1-GE3 |
| PNEDA Part # | SIZF916DT-T1-GE3 |
| Description | MOSFET N-CH DUAL 30V |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 26,832 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 11 - May 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIZF916DT-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SIZF916DT-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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SIZF916DT-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 95nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 15V, 4320pF @ 15V |
| Power - Max | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
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