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SKB02N120ATMA1

SKB02N120ATMA1

For Reference Only

Part Number SKB02N120ATMA1
PNEDA Part # SKB02N120ATMA1
Description IGBT 1200V 6.2A 62W TO263-3-2
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,888
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SKB02N120ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSKB02N120ATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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SKB02N120ATMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)6.2A
Current - Collector Pulsed (Icm)9.6A
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 2A
Power - Max62W
Switching Energy220µJ
Input TypeStandard
Gate Charge11nC
Td (on/off) @ 25°C23ns/260ns
Test Condition800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr)50ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3-2

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

145nC

Td (on/off) @ 25°C

34ns/90ns

Test Condition

450V, 80A, 2Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

160W

Switching Energy

1.95mJ (on), 1.71mJ (off)

Input Type

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Gate Charge

100nC

Td (on/off) @ 25°C

22ns/100ns

Test Condition

800V, 21A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

280W

Switching Energy

2.6mJ (on), 1.07mJ (off)

Input Type

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Gate Charge

45nC

Td (on/off) @ 25°C

11ns/180ns

Test Condition

1250V, 8A, 15Ohm, 15V

Reverse Recovery Time (trr)

5ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Supplier Device Package

TO-247HV

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IXYS

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

300W

Switching Energy

200µJ (off)

Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

18ns/90ns

Test Condition

400V, 30A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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