SMBTA56E6433HTMA1
For Reference Only
| Part Number | SMBTA56E6433HTMA1 |
| PNEDA Part # | SMBTA56E6433HTMA1 |
| Description | TRANS PNP 80V 0.5A SOT-23 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,454 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 14 - May 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SMBTA56E6433HTMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SMBTA56E6433HTMA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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SMBTA56E6433HTMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Power - Max | 330mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
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Manufacturer Diodes Incorporated Series * Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 5V @ 15mA, 150mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 (TO-206AA) |
