SPB07N60C3ATMA1
For Reference Only
| Part Number | SPB07N60C3ATMA1 |
| PNEDA Part # | SPB07N60C3ATMA1 |
| Description | MOSFET N-CH 650V 7.3A D2PAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 18,840 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPB07N60C3ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPB07N60C3ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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SPB07N60C3ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 14.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 9A, 10V Vgs(th) (Max) @ Id 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53.7nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1683pF @ 15V FET Feature - Power Dissipation (Max) 800mW (Ta), 12.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type F) Package / Case 6-UDFN Exposed Pad |
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 2.2Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package UMT3 Package / Case SC-70, SOT-323 |
