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SPB100N03S2L03T

SPB100N03S2L03T

For Reference Only

Part Number SPB100N03S2L03T
PNEDA Part # SPB100N03S2L03T
Description MOSFET N-CH 30V 100A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,158
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB100N03S2L03T Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB100N03S2L03T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPB100N03S2L03T, SPB100N03S2L03T Datasheet (Total Pages: 8, Size: 417.39 KB)
PDFSPB100N03S2L03T Datasheet Cover
SPB100N03S2L03T Datasheet Page 2 SPB100N03S2L03T Datasheet Page 3 SPB100N03S2L03T Datasheet Page 4 SPB100N03S2L03T Datasheet Page 5 SPB100N03S2L03T Datasheet Page 6 SPB100N03S2L03T Datasheet Page 7 SPB100N03S2L03T Datasheet Page 8

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SPB100N03S2L03T Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs220nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8180pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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