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SPB10N10L

SPB10N10L

For Reference Only

Part Number SPB10N10L
PNEDA Part # SPB10N10L
Description MOSFET N-CH 100V 10.3A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,942
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB10N10L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB10N10L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPB10N10L, SPB10N10L Datasheet (Total Pages: 8, Size: 241.26 KB)
PDFSPB10N10L G Datasheet Cover
SPB10N10L G Datasheet Page 2 SPB10N10L G Datasheet Page 3 SPB10N10L G Datasheet Page 4 SPB10N10L G Datasheet Page 5 SPB10N10L G Datasheet Page 6 SPB10N10L G Datasheet Page 7 SPB10N10L G Datasheet Page 8

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SPB10N10L Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs154mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds444pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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