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SPB73N03S2L-08 G

SPB73N03S2L-08 G

For Reference Only

Part Number SPB73N03S2L-08 G
PNEDA Part # SPB73N03S2L-08-G
Description MOSFET N-CH 30V 73A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,970
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB73N03S2L-08 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB73N03S2L-08 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPB73N03S2L-08 G, SPB73N03S2L-08 G Datasheet (Total Pages: 8, Size: 415.77 KB)
PDFSPI73N03S2L-08 Datasheet Cover
SPI73N03S2L-08 Datasheet Page 2 SPI73N03S2L-08 Datasheet Page 3 SPI73N03S2L-08 Datasheet Page 4 SPI73N03S2L-08 Datasheet Page 5 SPI73N03S2L-08 Datasheet Page 6 SPI73N03S2L-08 Datasheet Page 7 SPI73N03S2L-08 Datasheet Page 8

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SPB73N03S2L-08 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.1mOhm @ 36A, 10V
Vgs(th) (Max) @ Id2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs46.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1710pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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