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SPB80N10L G

SPB80N10L G

For Reference Only

Part Number SPB80N10L G
PNEDA Part # SPB80N10L-G
Description MOSFET N-CH 100V 80A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB80N10L G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB80N10L G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPB80N10L G, SPB80N10L G Datasheet (Total Pages: 8, Size: 108.75 KB)
PDFSPB80N10L G Datasheet Cover
SPB80N10L G Datasheet Page 2 SPB80N10L G Datasheet Page 3 SPB80N10L G Datasheet Page 4 SPB80N10L G Datasheet Page 5 SPB80N10L G Datasheet Page 6 SPB80N10L G Datasheet Page 7 SPB80N10L G Datasheet Page 8

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SPB80N10L G Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 58A, 10V
Vgs(th) (Max) @ Id2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4540pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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