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SPB80P06PGATMA1

SPB80P06PGATMA1

For Reference Only

Part Number SPB80P06PGATMA1
PNEDA Part # SPB80P06PGATMA1
Description MOSFET P-CH 60V 80A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 14,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB80P06PGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB80P06PGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SPB80P06PGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs23mOhm @ 64A, 10V
Vgs(th) (Max) @ Id4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs173nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5033pF @ 25V
FET Feature-
Power Dissipation (Max)340W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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