Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SPD02N60S5BTMA1

SPD02N60S5BTMA1

For Reference Only

Part Number SPD02N60S5BTMA1
PNEDA Part # SPD02N60S5BTMA1
Description MOSFET N-CH 600V 1.8A TO-252
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPD02N60S5BTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPD02N60S5BTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SPD02N60S5BTMA1 Datasheet
  • where to find SPD02N60S5BTMA1
  • Infineon Technologies

  • Infineon Technologies SPD02N60S5BTMA1
  • SPD02N60S5BTMA1 PDF Datasheet
  • SPD02N60S5BTMA1 Stock

  • SPD02N60S5BTMA1 Pinout
  • Datasheet SPD02N60S5BTMA1
  • SPD02N60S5BTMA1 Supplier

  • Infineon Technologies Distributor
  • SPD02N60S5BTMA1 Price
  • SPD02N60S5BTMA1 Distributor

SPD02N60S5BTMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id5.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs9.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds240pF @ 25V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IXTP1N80P

IXYS

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRF7413GTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

79nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

RJK0355DSP-01#J0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.1mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

IPSA70R2K0P7SAKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

3A

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

3.8nC @ 400V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

130pF @ 400V

FET Feature

-

Power Dissipation (Max)

17.6W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3-347

Package / Case

TO-251-3 Stub Leads, IPak

AUXHMF1404ZSTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

TS30013-M050QFNR

TS30013-M050QFNR

Semtech

IC REG BUCK 5V 3A 16QFN

SI8233BB-D-IS

SI8233BB-D-IS

Silicon Labs

DGTL ISO 2.5KV GATE DRVR 16SOIC

AUIRF1010ZS

AUIRF1010ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

4TPE220MAZB

4TPE220MAZB

Panasonic Electronic Components

CAP TANT POLY 220UF 4V 1411

MB95F698KPMC-G-SNE2

MB95F698KPMC-G-SNE2

Cypress Semiconductor

IC MCU 8BIT 60KB FLASH 48LQFP

TN2124K1-G

TN2124K1-G

Microchip Technology

MOSFET N-CH 240V 0.134A SOT23-3

MD2369A

MD2369A

Central Semiconductor Corp

TRANS 2NPN 40V 0.5A TO-78

FSA5157L6X

FSA5157L6X

ON Semiconductor

IC SWITCH SPDT 6MICROPAK

LK115D33-TR

LK115D33-TR

STMicroelectronics

IC REG LINEAR 3.3V 100MA 8SO

IHLP2525CZERR47M01

IHLP2525CZERR47M01

Vishay Dale

FIXED IND 470NH 17.5A 4.2 MOHM

H1102NLT

H1102NLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

MCP6566UT-E/OT

MCP6566UT-E/OT

Microchip Technology

IC COMPARATOR O-D 1.8V SOT23-5