SPD02N80C3BTMA1
For Reference Only
| Part Number | SPD02N80C3BTMA1 |
| PNEDA Part # | SPD02N80C3BTMA1 |
| Description | MOSFET N-CH 800V 2A TO-252 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,086 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPD02N80C3BTMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPD02N80C3BTMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SPD02N80C3BTMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.2A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 120µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 34mOhm @ 27A, 10V Vgs(th) (Max) @ Id 4V @ 29µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 50V FET Feature - Power Dissipation (Max) 58W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
