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SPD30N03S2L07GBTMA1

SPD30N03S2L07GBTMA1

For Reference Only

Part Number SPD30N03S2L07GBTMA1
PNEDA Part # SPD30N03S2L07GBTMA1
Description MOSFET N-CH 30V 30A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPD30N03S2L07GBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPD30N03S2L07GBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPD30N03S2L07GBTMA1, SPD30N03S2L07GBTMA1 Datasheet (Total Pages: 9, Size: 651.83 KB)
PDFSPD30N03S2L07GBTMA1 Datasheet Cover
SPD30N03S2L07GBTMA1 Datasheet Page 2 SPD30N03S2L07GBTMA1 Datasheet Page 3 SPD30N03S2L07GBTMA1 Datasheet Page 4 SPD30N03S2L07GBTMA1 Datasheet Page 5 SPD30N03S2L07GBTMA1 Datasheet Page 6 SPD30N03S2L07GBTMA1 Datasheet Page 7 SPD30N03S2L07GBTMA1 Datasheet Page 8 SPD30N03S2L07GBTMA1 Datasheet Page 9

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SPD30N03S2L07GBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2530pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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