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SPI12N50C3HKSA1

SPI12N50C3HKSA1

For Reference Only

Part Number SPI12N50C3HKSA1
PNEDA Part # SPI12N50C3HKSA1
Description MOSFET N-CH 500V 11.6A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,766
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI12N50C3HKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI12N50C3HKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI12N50C3HKSA1, SPI12N50C3HKSA1 Datasheet (Total Pages: 14, Size: 639.26 KB)
PDFSPP12N50C3XKSA1 Datasheet Cover
SPP12N50C3XKSA1 Datasheet Page 2 SPP12N50C3XKSA1 Datasheet Page 3 SPP12N50C3XKSA1 Datasheet Page 4 SPP12N50C3XKSA1 Datasheet Page 5 SPP12N50C3XKSA1 Datasheet Page 6 SPP12N50C3XKSA1 Datasheet Page 7 SPP12N50C3XKSA1 Datasheet Page 8 SPP12N50C3XKSA1 Datasheet Page 9 SPP12N50C3XKSA1 Datasheet Page 10 SPP12N50C3XKSA1 Datasheet Page 11

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SPI12N50C3HKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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