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SPI70N10L

SPI70N10L

For Reference Only

Part Number SPI70N10L
PNEDA Part # SPI70N10L
Description MOSFET N-CH 100V 70A I2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,772
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI70N10L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI70N10L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI70N10L, SPI70N10L Datasheet (Total Pages: 8, Size: 146.19 KB)
PDFSPP70N10L Datasheet Cover
SPP70N10L Datasheet Page 2 SPP70N10L Datasheet Page 3 SPP70N10L Datasheet Page 4 SPP70N10L Datasheet Page 5 SPP70N10L Datasheet Page 6 SPP70N10L Datasheet Page 7 SPP70N10L Datasheet Page 8

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SPI70N10L Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4540pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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