SPP04N80C3XK
For Reference Only
| Part Number | SPP04N80C3XK |
| PNEDA Part # | SPP04N80C3XK |
| Description | MOSFET N-CH 800V 4A TO-220AB |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,606 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 7 - May 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPP04N80C3XK Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPP04N80C3XK |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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SPP04N80C3XK Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 88A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 30mOhm @ 44A, 10V Vgs(th) (Max) @ Id 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
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