SPP15N65C3HKSA1
For Reference Only
| Part Number | SPP15N65C3HKSA1 |
| PNEDA Part # | SPP15N65C3HKSA1 |
| Description | MOSFET N-CH 650V 15A TO-220 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,256 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPP15N65C3HKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPP15N65C3HKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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SPP15N65C3HKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 9.4A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 675µA |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 40A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 34mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 79nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V FET Feature - Power Dissipation (Max) 1.75W (Ta), 60W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 29.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 14.5mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 10V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 26.5A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2848pF @ 40V FET Feature - Power Dissipation (Max) 7.4W (Ta), 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (5x6) Package / Case 8-PowerSMD, Flat Leads |
