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SPP15P10PLGHKSA1

SPP15P10PLGHKSA1

For Reference Only

Part Number SPP15P10PLGHKSA1
PNEDA Part # SPP15P10PLGHKSA1
Description MOSFET P-CH 100V 15A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,590
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPP15P10PLGHKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPP15P10PLGHKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPP15P10PLGHKSA1, SPP15P10PLGHKSA1 Datasheet (Total Pages: 10, Size: 860.47 KB)
PDFSPP15P10PLGHKSA1 Datasheet Cover
SPP15P10PLGHKSA1 Datasheet Page 2 SPP15P10PLGHKSA1 Datasheet Page 3 SPP15P10PLGHKSA1 Datasheet Page 4 SPP15P10PLGHKSA1 Datasheet Page 5 SPP15P10PLGHKSA1 Datasheet Page 6 SPP15P10PLGHKSA1 Datasheet Page 7 SPP15P10PLGHKSA1 Datasheet Page 8 SPP15P10PLGHKSA1 Datasheet Page 9 SPP15P10PLGHKSA1 Datasheet Page 10

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SPP15P10PLGHKSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs200mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id2V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1490pF @ 25V
FET Feature-
Power Dissipation (Max)128W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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